Physics of Nanoscale Devices

Por: Swayam . en: , ,

Week 1:Introduction to nanoelectronics – device scaling, how device physics is fundamentally different in mesoscopic and nano devices – voltage drop, heat dissipation etc., Necessity to understand and invoke quantum mechanics in nanoelectronics.Week 2:Introduction to quantum mechanics, Schrödinger equation, Free electron wavefunction, Particle/electron in a box, electrons in a solid.Week 3:Introduction to KP model, Brillouin Zones, KP model – origin of energy bands in solids.Week 4:Density of states – 0D, 1D, 2D, 3D conductors, Fermi function, The notion of modes in a conductor. Week 5:Conductance, Bottom-up approach, Landauer’s formalism, Ballistic and Diffusive transport – transmission, transition from ballistic to diffusive transport.Week 6:Introduction to MOSFET – A barrier-controlled device, MOSFET electrostatics.Week 7:MOSFET 2D electrostatics, MOSFET Capacitance.Week 8:High-K dielectric, Strained Si technology, Quantum confinement in MOSFET.Week 9:ETSOI-MOSFET, Transport in MOSFET, Ballistic MOSFET.
Week 10:Ballistic injection velocity in MOSFET, Thermoelectric effects and thermoelectric devices.Week 11:Quantum dot devices – quantum capacitance, IV characteristics, self-consistent method.Week 12:Introduction to ab initio simulation, NEGF, Summary of the entire course.